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1
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0012435390
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(1989)
J. Vac. Sci. Technol. B
, vol.7
, pp. 345
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Chi, J.-I.1
Biswas, D.2
Iyer, S.V.3
Kumar, N.S.4
Morkoç, H.5
Bean, R.6
Zanio, K.7
Grober, R.D.8
Drew, H.D.9
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20
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84926593720
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Semiconductors: Physics of Group IV Elements and III—V Compounds, edited by O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 17a (Springer, New York, 1982), and references therein, Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, edited by O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 22a (Springer, New York, 1987).
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21
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84926565110
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The diffusion coefficient D is calculated from the mobility mu by D= μ kBT/q when nondegenerate carrier statistics apply and D= case 2 over 3 μ EF/q when degenerate carrier statistics apply (kB is Boltzmann's constant, T is the carrier temperature, q is the electronic charge, and EF is the Fermi energy).
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24
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84926572836
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One obtains the following values of tau by using the radiative recombination coefficient rb= 1 times 109 cm3/sec reported by Fossum and Ancker-Johnson (Ref. 15), τ (n)=1/rbn, τ (n= 1 times 1015)=1 musec, τ (n= 1 times 1016) = 100 nsec. We used these values of tau as a starting point for the analysis. A reasonable estimate of the lower limit to tau is 5 nsec, which is of the order of magnitude of the carrier lifetime in GaAs (Ref. 11).
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34
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84926592508
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By a statically screened Coulomb potential, we mean a Coulomb potential moderated by a Thomas-Fermi dielectric function. See, for example, N. W. Ashcroft and N. D. Mermin, Solid State Physics (Saunders College, Philadelphia, PA, 1976), pp. 337–342.
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35
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84926532291
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Fortunately, reabsorption effects can be ignored in InSb at 2 K. The optical-absorption length for light near the Fermi edge is greater than 100 mum (Ref. 15) while the ambipolar diffusion lengths for τ =25 nsec, which we obtained from the density-profile calculation, are of the order of 10 mum.
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36
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84926604053
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H. B. Bebb and E. W. Williams, Semiconductors and Semimetals (Academic, New York, 1972), Vol. 8, Chap. 4.
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37
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84926599052
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We determine a reasonable estimate of the monochromator instrument function by dispersing the Nd:YAG laser into the monochromator and measuring the line shape of the fifth-order diffracted output of the monochromator. This line shape fits reasonably to a Gaussian characterized by standard deviation of 8.2 nm (0.36 meV).
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38
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84926533988
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The lattice temperature would have to increase by more than 20 K to account for the observed shift of the 235-meV peak (Ref. 11).
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39
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84926590764
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The gap decreases by 0.5 meV as the temperature is raised to 25 K.
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