Efficient 3.3μm light emitting diodes for detecting methane gas at room temperature

Electronics Letters

Volumn 30, Issue 23, 1994, Pages 1968-1969

  Parry, M K ^a   Krier, A ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Gas sensors; Light emitting diodes; Optical sensors

Indexed keywords

COMPOSITION EFFECTS; EPITAXIAL GROWTH; GAS DETECTORS; LIQUID PHASE EPITAXY; METHANE; MORPHOLOGY; OPTICAL SENSORS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

INFRARED METHANE GAS SENSORS;

LIGHT EMITTING DIODES;

EID: 0028547316     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19941360     Document Type: Article

References (14)

1. 1-xAs on GaAs during the pseudomorphic growth regime’, Appl. Phys, Lett., 1988, 53, pp. 684–686
2. RADULESCU, D., and SCHAFF, W.: ‘Influence of substrate temperature and InAs more fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs’, J. Vac. Sci, Technol., 1989, B7, pp. 111–115
3. 1-ydouble heterostructure lasers with emission wavelength of 1.67μm at room temperature’, Jpn. J. Appl. Phys., 1978, 17, pp. 1899–1900
4. 1-y’, Appl. Phys. Lett., 1976, 28, pp. 499–501
5. BACHMANN, K., and SHAY, J.: ‘An InGaAs detector for the 1.0-1.7μm wavelength range’, Appl. Phys. Lett., 1978, 32, pp. 446–448
6. MADELUNG, O. (Ed.): ‘Data science and technology’ (Springer, Berlin, 1978)
7. GERRITSEN, H.: ‘Use of room temperature diodes in monitoring specific gases in air, particularly methane and carbon monoxide’. Final Report. US Department of Interior, Bureau of Mines, Contract No. 90101740, Grant No. G010740, NTIS No, PB-245-912/AS, 1974
8. ASTLES, M., and DOSSER, O.: ‘Substrate instability during the LPE growth of (Ga.In)As alloys on InAs substrates’, J. Crystal Growth, 1981, 54, pp. 485–492
9. x(x < 0.2) solid solutions’, Izv. Akad. Nauk. SSSR, Neorg. Mater., 1986, 22, pp. 482–486
10. 5alloys’, SPIE-Chemical, Biological and Environmental Fiber Sensors III, 1991, Vol. 1587, pp. 334–345
11. parry, M., and KRIER, A.: ‘Liquid phase epitaxial growth and photoluminescence of Mn-doped InGaAs with InAs-enriched composition’, J. Crystal Growth, 1994, 139, pp. 238‘246
12. PARRY, M., and BLRIER, A.: ‘Interface recombination and photo luminescence efficiency of thick (>3μm) LPE InGaAs with InAs-enriched composition’, submitted to Thin Solid Films, 1994
13. ROTHMAN, L., and GAMACHE, R.: ‘The Hitran molecular database: Editions of 1991 and 1992’, J. Quantum Radia'ion Transfer, 1992, 48, pp. 469–507
14. MOSS, T., (Ed.): ‘Handbook on semiconductors’. Vol. 4, pp. 469–507