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Journal of Applied Physics

Volumn 65, Issue 10, 1989, Pages 4079-4081

Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

(5) Grober, Robert D a,b Drew, H D a,b Chyi, Jen Inn c Kalem, S c Morkoc H c

a UNIVERSITY OF MARYLAND (United States)

b LABORATORY FOR PHYSICAL SCIENCES (United States)

c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000481836 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.343339 Document Type: Article

Times cited : (50)

References (15)

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- These binding energies were computed assuming a hydrogenic model, a dielectric constant of 15.15, an effective electron mass of [formula omitted] and an effective heavy-hole mass of [formula omitted]

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