Photoluminescence of epitaxial InAs produced by different growth methods

Infrared Physics and Technology

Volumn 38, Issue 7, 1997, Pages 405-413

  Fisher, M ^a   Krier, A ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EXCITONS; FILM GROWTH; INFRARED DETECTORS; LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

EXCITONIC RECOMBINATION; INDIUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0031334422     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(97)00032-7     Document Type: Article

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