Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts

Journal of Applied Physics

Volumn 80, Issue 12, 1996, Pages 7094-7103

  Gao, Wei ^a,c   Berger, Paul R ^a   Ervin, Matthew H ^b   Pamulapati, Jagadeesh ^b   Lareau, Richard T ^b   Schauer, Stephen ^c,d  

^a UNIVERSITY OF DELAWARE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Laserton   (United States)

^d MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001542935     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363721     Document Type: Article

References (23)

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