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Volumn 24, Issue 7, 1995, Pages 833-840

Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies

Author keywords

InGaAs; liquid phase epitaxy (LPE); rare earth gettering

Indexed keywords

CHARACTERIZATION; DYSPROSIUM; ELECTRIC PROPERTIES; IMPURITIES; LIQUID PHASE EPITAXY; RARE EARTH ELEMENTS; SPECTRUM ANALYSIS;

EID: 0029345008     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02653332     Document Type: Article
Times cited : (10)

References (23)
  • 3
    • 84936473032 scopus 로고    scopus 로고
    • R.J. Walters, G.J. Shaw, G.P. Summers, M.W. Wan Lass and J.S. Ward, Proc. Fourth Intl. Conf. InP and Related Mater., (New York: IEEE New York 1992), p. 550.
  • 7
    • 84936473034 scopus 로고    scopus 로고
    • S.H. Grooves and M.C. Plonko, 7th Intl. Symp. on GaAs and Related Compounds, Int. Phys Conf. Series 45, 71 (1979).
  • 14
    • 84936473033 scopus 로고    scopus 로고
    • J. Flahaut, Handbook of Physics and Chemistry of Rare Earths, vol. 4, ed. K.A. Gschneider, Jr. and I.R. Eyring (New Holland), Ch. 1.
  • 18
    • 84936473036 scopus 로고    scopus 로고
    • M. Razeghi, The MOCVD Challange (Philadelphia: Adam Hilger).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.