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Volumn 24, Issue 7, 1995, Pages 833-840
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Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies
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Author keywords
InGaAs; liquid phase epitaxy (LPE); rare earth gettering
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Indexed keywords
CHARACTERIZATION;
DYSPROSIUM;
ELECTRIC PROPERTIES;
IMPURITIES;
LIQUID PHASE EPITAXY;
RARE EARTH ELEMENTS;
SPECTRUM ANALYSIS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
GETTERING;
INDIUM GALLIUM ARSENIDE;
INDIUM ALLOYS;
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EID: 0029345008
PISSN: 03615235
EISSN: 1543186X
Source Type: Journal
DOI: 10.1007/BF02653332 Document Type: Article |
Times cited : (10)
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References (23)
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