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1
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85027098977
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1995 Inten. Conf. Solid State Devices and Materials, D-8-1, Osaka, Japan.
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M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "A novel material of GalnNAs for long-wavelength-range laser diodes with excellent hightemperature performance," 1995 Inten. Conf. Solid State Devices and Materials, D-8-1, Osaka, Japan.
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A Novel Material of GalnNAs for Long-wavelength-range Laser Diodes with Excellent Hightemperature Performance
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Kondow, M.1
Uomi, K.2
Niwa, A.3
Kitatani, T.4
Watahiki, S.5
Yazawa, Y.6
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2
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0030079777
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Jpn. J. Appl. Phys., vol.33, pp.1273-1275, 199G.
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M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GalnNAs: A novel material for long-wavelength-rangc laser diodes with excellent hightemperature performance," Jpn. J. Appl. Phys., vol.33, pp.1273-1275, 199G.
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GalnNAs: a Novel Material for Long-wavelength-rangc Laser Diodes with Excellent Hightemperature Performance
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Kondow, M.1
Uomi, K.2
Niwa, A.3
Kitatani, T.4
Watahiki, S.5
Yazawa, Y.6
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3
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0030289447
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Electron. Lett., vol.32, pp.2244-2245, 1996.
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M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "Room-temperature continuous-wave operation of GalnNAs/GaAs laser diode," Electron. Lett., vol.32, pp.2244-2245, 1996.
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Room-temperature Continuous-wave Operation of GalnNAs/GaAs Laser Diode
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Kondow, M.1
Nakatsuka, S.2
Kitatani, T.3
Yazawa, Y.4
Okai, M.5
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4
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85027128850
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2nd Optoelectronics and Communication Conf., 9C2-1, Seoul, Korea, July 1997.
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M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "GalnNAs laser diode for high temperature operation," 2nd Optoelectronics and Communication Conf., 9C2-1, Seoul, Korea, July 1997.
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GalnNAs Laser Diode for High Temperature Operation
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Kondow, M.1
Nakatsuka, S.2
Kitatani, T.3
Yazawa, Y.4
Okai, M.5
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5
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0344203292
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IEEE Photon. Technol. Lett., vol.10, pp.487-488, 1998.
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K. Nakahara, M. Kondow, T. Kitatani, M.C. Larson, and K. Uomi, "1.3-/mi continuous-wave lasing operation in GalnNAs quantum well lasers," IEEE Photon. Technol. Lett., vol.10, pp.487-488, 1998.
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1.3-/mi Continuous-wave Lasing Operation in GalnNAs Quantum Well Lasers
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Nakahara, K.1
Kondow, M.2
Kitatani, T.3
Larson, M.C.4
Uomi, K.5
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6
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85027182546
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IEEE Lasers and Electro-Optics Society, PD1.3, San Francisco, USA, Nov. 1997.
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M.C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, II. Inoue, and K. Uomi, "Room temperature pulsed operation of GalnNAs/GaAs long-wavelength vertical cavity lasers," IEEE Lasers and Electro-Optics Society, PD1.3, San Francisco, USA, Nov. 1997.
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Room Temperature Pulsed Operation of GalnNAs/GaAs Long-wavelength Vertical Cavity Lasers
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Larson, M.C.1
Kondow, M.2
Kitatani, T.3
Nakahara, K.4
Tamura, K.5
Inoue, I.I.6
Uomi, K.7
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7
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0031996467
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IEEE Photon. Technol. Lett., vol.10, pp.188-190, 1998.
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M.C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, H. Inoue, and K. Uomi, "GalnNAs/GaAs longwavelength vertical-cavity surface-emitting laser diodes," IEEE Photon. Technol. Lett., vol.10, pp.188-190, 1998.
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GalnNAs/GaAs Longwavelength Vertical-cavity Surface-emitting Laser Diodes
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Larson, M.C.1
Kondow, M.2
Kitatani, T.3
Nakahara, K.4
Tamura, K.5
Inoue, H.6
Uomi, K.7
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8
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0031143052
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Jpn. J. Appl. Phys., vol.36, pp.2G71-2G75, 1997.
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S. Sato, Y. Osawa, and T. Saitoh, "Room-temperature operation of GalnNAs/GalnP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition," Jpn. J. Appl. Phys., vol.36, pp.2G71-2G75, 1997.
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Room-temperature Operation of GalnNAs/GalnP Double-heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
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Sato, S.1
Osawa, Y.2
Saitoh, T.3
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9
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0031675890
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Jpn. J. Appl. Phys., vol.37, pp.90-91, 1998.
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T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama, and K. Iga, "GalnNAs/GaAs quantum well growth by chemical beam epitaxy," Jpn. J. Appl. Phys., vol.37, pp.90-91, 1998.
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GalnNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
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Miyamoto, T.1
Takeuchi, K.2
Kageyama, T.3
Koyama, F.4
Iga, K.5
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10
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0001428988
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Appl. Phys. Lett., vol.73, pp.3703-3705, 1998.
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P. Perlin, S.G. Subramanya, D.E. Mars, J. Krugar, N.A. Shapiro, H. Siegle, and E.R. Weber, "Pressure and temperature dependence of the absorption edge of a thick Gao.92lno.osAso.98sNo.oi5 layer," Appl. Phys. Lett., vol.73, pp.3703-3705, 1998.
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Pressure and Temperature Dependence of the Absorption Edge of a Thick Gao.92lno.osAso.98sNo.oi5 Layer
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Perlin, P.1
Subramanya, S.G.2
Mars, D.E.3
Krugar, J.4
Shapiro, N.A.5
Siegle, H.6
Weber, E.R.7
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11
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0032680422
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Electron. Lett., vol.35, pp.1251-1252, 1999.
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S. Sato and S. Satoh, "1.3/mi continuous-wave operation of GalnNAs lasers grown by metal organic chemical vapor deposition," Electron. Lett., vol.35, pp.1251-1252, 1999.
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1.3/mi Continuous-wave Operation of GalnNAs Lasers Grown by Metal Organic Chemical Vapor Deposition
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Sato, S.1
Satoh, S.2
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12
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85027177163
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Ext. Abstr. (45th Spring Meet. 1998), Jpn. Soc. Appl. Phys., p.290.
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S. Tanaka, A, Moto, T. Tanabe, N. Ikoina, and S. Takagishi, "Improvement of optical properties of GaNAs epitaxial films by thermal annealing," Ext. Abstr. (45th Spring Meet. 1998), Jpn. Soc. Appl. Phys., p.290.
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Improvement of Optical Properties of GaNAs Epitaxial Films by Thermal Annealing
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Tanaka, S.1
Tanabe, T.2
Ikoina, N.3
Takagishi, S.4
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13
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85027138900
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Ext. Abstr. (45th Spring Meet. 1998), Jpn. Soc. Appl. Phys., p.291.
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H. Saito, T. Makimoto, and N. Kobayashi, "Thermal annealing effect of InGaAsN/GaAs QW structure grown by MOVPE," Ext. Abstr. (45th Spring Meet. 1998), Jpn. Soc. Appl. Phys., p.291.
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Thermal Annealing Effect of InGaAsN/GaAs QW Structure Grown by MOVPE
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Saito, H.1
Makimoto, T.2
Kobayashi, N.3
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14
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85027168935
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Jpn. J. Appl. Phys. Lett., vol.38, pp.298-300, 1999.
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T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, and K. Iga, "Thermal annealing of GalnNAs/GaAs quantum wells by chemical beam epitaxy and its effect on photoluminescence," Jpn. J. Appl. Phys. Lett., vol.38, pp.298-300, 1999.
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Thermal Annealing of GalnNAs/GaAs Quantum Wells by Chemical Beam Epitaxy and Its Effect on Photoluminescence
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Kageyama, T.1
Miyamoto, T.2
Makino, S.3
Koyama, F.4
Iga, K.5
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15
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0032659915
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J. Cryst. Growth, vol.201/202, pp.351-354, 1999. (Copyright (1999), with permission from Elsevier Science.)
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T. Kitatani, M. Kondow, K. Nakahara, M.C. Larson, Y. Yazawa, M. Okai, and K. Uomi, "Nitrogen incorporation rate, optimal growth temperature, and AsHs-flow rate in GalnNAs grown by gas-source MBE using N-radica!s as an N-source," J. Cryst. Growth, vol.201/202, pp.351-354, 1999. (Copyright (1999), with permission from Elsevier Science.)
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Nitrogen Incorporation Rate, Optimal Growth Temperature, and AsHs-flow Rate in GalnNAs Grown by Gas-source MBE Using N-radica!s as an N-source
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Kitatani, T.1
Kondow, M.2
Nakahara, K.3
Larson, M.C.4
Yazawa, Y.5
Okai, M.6
Uomi, K.7
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16
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0034140413
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J. Cryst. Growth, vol.209, pp.345-349, 2000.
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T. Kitatani, K. Nakahara, M. Kondow, K. Uomi, and T. Tanaka, "Mechanism analysis of improved GalnNAs optical properties through thermal annealing," J. Cryst. Growth, vol.209, pp.345-349, 2000.
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Mechanism Analysis of Improved GalnNAs Optical Properties through Thermal Annealing
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Kitatani, T.1
Nakahara, K.2
Kondow, M.3
Uomi, K.4
Tanaka, T.5
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