Evaluation and reduction of plasma damage in a high-density, inductively coupled metal etcher

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 229-232

  Colonell, J I ^a   Downey, S W ^a   Kook, T ^a   Patrick, R ^a   Siu, S ^a   Jones, P L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC BREAKDOWN OF SOLIDS; MOSFET DEVICES; OXIDES; PLASMA DENSITY; PLASMA ETCHING; PLASMA PROBES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

INDUCTIVELY COUPLED PLASMA (ICP) METAL ETCHER; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

REACTIVE ION ETCHING;

EID: 0030679041     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)