Effects of degree of dissociation on aluminum etching in high-density Cl2 plasmas

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 9 PART A/B, 1998, Pages

  Samukawa, Seiji ^a   Donnelly, Vincent M ^b  

^a NEC CORPORATION   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Electron energy distribution function, dissociation; Inductive coupled plasma; Plasma etching; Ultrahigh frequency plasma

Indexed keywords

ANISOTROPY; CHLORINE; DISSOCIATION; ELECTRONIC DENSITY OF STATES; PLASMA ETCHING; PLASMAS; PROBABILITY DENSITY FUNCTION;

ANISOTROPIC ETCHING; ELECTRON ENERGY DISTRIBUTION FUNCTION; INDUCTIVELY COUPLED PLASMA; ULTRAHIGH FREQUENCY PLASMA;

ALUMINUM;

EID: 0032154675     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1036     Document Type: Article

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