Observation and nucleation control of Ge nanoislands on Si(111) surfaces using scanning reflection electron microscopy

Journal of Electron Microscopy

Volumn 49, Issue 2, 2000, Pages 217-223

  Shibata, Motoshi ^a   Shklyaev, Alexander A ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Ge island; Nanostructure; Quantum dot; Scanning reflection electron microscopy; Si(111) surface

Indexed keywords

GERMANIUM; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON; ULTRATHIN FILMS; WETTING;

GE ISLAND; GE NANOISLANDS; HIGH RESOLUTION; NANOSTRUCLURE; NUCLEATION CONTROL; OBSERVATIONS CONTROL; QUANTUM DOT; REFLECTION ELECTRON MICROSCOPY; SCANNING REFLEAIA ELEARON MICROSCOPY; SI(111) SURFACE;

NANOCRYSTALS;

EID: 0034057974     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023801     Document Type: Article

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