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Volumn 34, Issue 1, 1987, Pages 19-27

Submicrometer-Channel CMOS for Low-Temperature Operation

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; TRANSISTORS - JUNCTIONS;

EID: 0023120271     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22881     Document Type: Article
Times cited : (99)

References (27)
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    • A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits
    • D. B. Scott, W. R. Hunger, and H. Shichijo, “A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits,” IEEE Trans. Electron Devices vol. ED-29, p. 651, 1982.
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    • Scott, D.B.1    Hunger, W.R.2    Shichijo, H.3
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    • Degradation of 77K MOSFET characteristics due to channel hot electrons
    • presented at the 1984 Device Research Conference; also in
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    • (abstract)
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    • Design and characteristics of the lightly doped drain-source (LDD) insulated gate field effect transistor
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    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1359
    • Ogura, S.1    Tsang, P.J.2    Walker, W.W.3    Critchlow, D.L.4    Shepard, J.F.5
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    • Interface standard for low-voltage TTL-compatible (LVTTL) VLSI digital circuits.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.