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Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 487-490

Excitation density dependence of photoluminescence and barrier doping effect in InxGa1-xN quantum wells

(5) Oh, E a Sone, C S a Park, H a Nam, O H a Park, Y a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242981 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-3951(199911)216:1<487::AID-PSSB487>3.0.CO;2-X Document Type: Article

Times cited : (5)

References (9)

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