Unified physical i-v model including self-heating effect for fully depleted SOI/MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1291-1296

  Cheng, Yuhua ^a,b   Fjeldly, Tor A ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MODULATION; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY;

CHANNEL LENGTH MODULATION; DRAIN INDUCED BARRIER LOWERING; DRAIN INDUCED CONDUCTIVITY ENHANCEMENT; PARASITIC SERIES RESISTANCE; SELF HEATING EFFECT; THERMAL RESISTANCE MEASUREMENT;

MOSFET DEVICES;

EID: 0030211374     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506782     Document Type: Article

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