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Volumn 39, Issue 5, 1992, Pages 1170-1178

Modeling of Output Snapback Characteristics in n-Channel SOI MOSFET’s

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS - DESIGN; TRANSISTORS - MODELING;

EID: 0026869950     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.129099     Document Type: Article
Times cited : (16)

References (10)
  • 2
    • 0026222578 scopus 로고
    • An analytical model for snapback in n-channel SOI MOSFET’s
    • Sept.
    • J. S. T. Huang, J. S. Kueng, and T. Fabian, “An analytical model for snapback in n-channel SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 38, pp. 2082–2091, Sept. 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 2082-2091
    • Huang, J.S.T.1    Kueng, J.S.2    Fabian, T.3
  • 3
    • 0020766221 scopus 로고
    • A simplified model of short-channel MOSFET characteristics in the breakdown mode
    • June
    • F. C. Hsu, R. S. Muller, and C. Hu, “A simplified model of short-channel MOSFET characteristics in the breakdown mode,” IEEE Trans. Electron Devices, vol. ED-30, pp. 571–576, June 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 571-576
    • Hsu, F.C.1    Muller, R.S.2    Hu, C.3
  • 4
    • 0023999599 scopus 로고
    • Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET’s
    • Apr.
    • K. K. Young and J. A. Burns, “Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 426–431, Apr. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 426-431
    • Young, K.K.1    Burns, J.A.2
  • 6
    • 0021601456 scopus 로고
    • A simple method to characterize substrate current in MOSFET’s
    • Dec.
    • T. Y. Chan, P. K. Ko, and C. Hu, “A simple method to characterize substrate current in MOSFET’s,’’ IEEE Electron Device Lett., vol. EDL-5, pp. 505–507, Dec. 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 505-507
    • Chan, T.Y.1    Ko, P.K.2    Hu, C.3
  • 7
    • 0023382680 scopus 로고
    • A model for the electric field in lightly doped drain structures
    • July
    • K. Mayaram, J. C. Lee, and C. Hu, “A model for the electric field in lightly doped drain structures,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1509–1518, July 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 1509-1518
    • Mayaram, K.1    Lee, J.C.2    Hu, C.3
  • 8
    • 0022135706 scopus 로고
    • Dependence of channel electric field on device scaling
    • Oct.
    • T. Y. Chan, P. K. Ko, and C. Hu, “Dependence of channel electric field on device scaling,” IEEE Electron Device Lett., vol. EDL-6, pp. 551–553, Oct. 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , pp. 551-553
    • Chan, T.Y.1    Ko, P.K.2    Hu, C.3
  • 9
    • 0021501347 scopus 로고
    • The effect of high fields on MOS device and circuit performance
    • Oct.
    • C. G. Sodini, P. K. Ko, and J. L. Moll, “The effect of high fields on MOS device and circuit performance,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1386–1393, Oct. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1386-1393
    • Sodini, C.G.1    Ko, P.K.2    Moll, J.L.3
  • 10
    • 84863340719 scopus 로고
    • Study of transistor switching circuit stability in the avalanche region
    • Mar.
    • J. S. T. Huang, “Study of transistor switching circuit stability in the avalanche region,” IEEE J. Solid-State Circuits, vol. SC-2, pp. 10–21, Mar. 1967.
    • (1967) IEEE J. Solid-State Circuits , vol.SC-2 , pp. 10-21
    • Huang, J.S.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.