Step structure of GaInAsSb grown by organometallic vapor phase epitaxy

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 112-117

  Wang, C A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; REACTION KINETICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMODYNAMICS;

STEP BUNCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033882345     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0105-5     Document Type: Article

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