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Volumn 170, Issue 1-4, 1997, Pages 292-296

Surface morphology of carbon-doped GaAs grown by MOVPE

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES;

EID: 0030654620     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00589-1     Document Type: Article
Times cited : (15)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.