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Volumn 170, Issue 1-4, 1997, Pages 292-296
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Surface morphology of carbon-doped GaAs grown by MOVPE
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Author keywords
[No Author keywords available]
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Indexed keywords
ADSORPTION;
ATOMIC FORCE MICROSCOPY;
EPITAXIAL GROWTH;
MORPHOLOGY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SURFACE PROPERTIES;
SURFACE MORPHOLOGY;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030654620
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00589-1 Document Type: Article |
Times cited : (15)
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References (23)
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