Step bunching caused by annealing vicinal GaAs(001) in and hydrogen ambient in its stationary state

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 8, 1998, Pages 4500-4508

  Hata, K ^a   Shigekawa, H ^a   Ueda, T ^b   Akiyama, M ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Semiconductor Technology L Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043081618     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.4500     Document Type: Article

References (33)

1. K. Hata, H. Shigekawa, T. Ueda, M. Akiyama, and T. Okano, Phys. Rev. B 55, 7039 (1997), and references therein.
2. M. Kasu and N. Kobayashi, Appl. Phys. Lett. 62, 1262 (1993).
3. K. Ohkuri, J. Ishizaki, S. Hara, and T. Fukui, J. Cryst. Growth 160, 235 (1996).
4. J. Ishizaki, K. Ohkuri, and T. Fukui, Jpn. J. Appl. Phys., Part 1 35, 1280 (1996).
5. M. Kasu and N. Kobayashi, Jpn. J. Appl. Phys., Part 1 78, 3026 (1995).
6. M. Shinohara and N. Inoue, Appl. Phys. Lett. 66, 1936 (1995).
7. H. Saito, K. Uwai, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 32, 4400 (1993).
8. K. Hata, A. Kawazu, T. Okano, T. Ueda, and M. Akiyama, Appl. Phys. Lett. 63, 1625 (1993).
9. K. Hata, T. Ikoma, H. Hirakawa, T. Okano, A. Kawazu, T. Ueda, and M. Akiyama, J. Appl. Phys. 76, 5601 (1994).
10. T. Fukui, J. Ishizaki, S. Hara, J. Motohisa, and H. Hasegawa, J. Cryst. Growth 146, 183 (1995).
11. G. W. Smith, A. J. Pidduck, C. R. Whitehouse, J. L. Glasper, A. M. Keir, and C. Pickering, Appl. Phys. Lett. 59, 3282 (1991).
12. H. Saito, K. Uwai, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 32, L4400 (1993).
13. I. Kamiya, D. E. Aspnes, H. Tanaka, L. T. Florez, J. P. Harrison, and R. Bhat, Phys. Rev. Lett. 68, 627 (1992).
14. M. D. Pashley, K. W. Haberern, and J. M. Gaines, Appl. Phys. Lett. 58, 406 (1991).
15. K. Hata, H. Shigekawa, T. Ueda, M. Akiyama, and T. Okano, J. Vac. Sci. Technol. A 15, 1269 (1997).
16. R. L. Schwoebel and E. J. Shipsey, J. Appl. Phys. 37, 3682 (1966).
17. G. S. Bales and A. Zangwill, Phys. Rev. B 41, 5500 (1990).
18. M. D. Pashley, K. W. Haberern, and J. M. Gaines, Surf. Sci. 267, 153 (1992).
19. J. M. Rickman and D. J. Srolovitz, Surf. Sci. 248, 211 (1993).
20. E. D. Williams and N. C. Bartelt, Science 251, 393 (1991).
21. K. Hata et. al (unpublished).
22. J-Sik Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano, and Y. Aoyagi, Appl. Phys. Lett. 67, 1283 (1995).
23. G. Brocks, P. J. Kelly, and R. Car, Phys. Rev. Lett. 66, 1729 (1991).
24. K. Shiraishi, Appl. Phys. Lett. 60, 1363 (1992).
25. C. Chonglin and T. T. Tsong, Phys. Rev. Lett. 64, 3147 (1990).
26. D. C. Senft and G. Ehrlich, Phys. Rev. Lett. 74, 294 (1995).
27. S. Kodiyalam, K. E. Khor, and S. Das Sarma, Phys. Rev. B 53, 9913 (1996).
28. B. S. Swartzentruber and M. Schacht, Surf. Sci. 322, 83 (1995).
29. T. Shitara, D. D. Vvedensky, M. R. Wilby, J. Zhang, J. H. Neave, and B. A. Joyce, Phys. Rev. B 46, 6825 (1992).
30. C. Herring, Phys. Rev. 82, 87 (1951).
31. F. C. Frank, in Growth and Perfection of Crystals, edited by R. Doremus, B. Roberts, and D. Turnbull (Wiley, New York, 1958), p. 411.
32. A. V. Latyshev, A. L. Aseev, A. B. Krasilnikov, and S. I. Stenin, Surf. Sci. 213, 157 (1989).
33. J. S. Ozcomert, W. W. Pai, N. C. Bartelt, and J. E. Reutt-Robey, Surf. Sci. 293, 183 (1993).