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Materials Science and Engineering B

Volumn 41, Issue 2, 1996, Pages 201-205

Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy

(4) Giani, A a Pascal Delannoy, F a Podlecki, J a Bougnot, G a

a UNIVERSITÉ MONTPELLIER II (France)

Author keywords

Antimonide based compounds; Metal organic vapor phase epitaxy; Semiconductors

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SOLUBILITY; SUBSTRATES; THERMAL EFFECTS;

LATTICE MATCHING;

SEMICONDUCTING FILMS;

EID: 0041322318 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01662-5 Document Type: Article

Times cited : (5)

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