Comparative study of GaN growth process by MOVPE

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 463-468

  Sun, Jingxi ^a   Redwing, J M ^b   Kuech, T F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COMPUTATIONAL FLUID DYNAMICS; FLOW OF FLUIDS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE;

GALLIUM NITRIDE; HIGH TEMPERATURE GAS FLOW ZONE; PREDEPOSITION REACTIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033356083     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-463     Document Type: Conference Paper

References (8)

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