메뉴 건너뛰기




Volumn 81, Issue 22, 1998, Pages 4903-4906

First principles simulations of the structure, formation, and migration energies of kinks on the 90° partial dislocation in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000134765     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.4903     Document Type: Article
Times cited : (49)

References (32)
  • 5
    • 25344453677 scopus 로고
    • S. Öberg et al., Phys. Rev. B, 51, 13 138 (1995).
    • (1995) Phys. Rev. B , vol.51 , Issue.13 , pp. 138
    • Öberg, S.1
  • 16
  • 23
    • 0001417755 scopus 로고    scopus 로고
    • R. W. Nunes et al., Phys. Rev. B, 57, 10 388 (1998).
    • (1998) Phys. Rev. B , vol.57 , Issue.10 , pp. 388
    • Nunes, R.W.1
  • 25
    • 0000514669 scopus 로고
    • R. W. Cahn, P. Hassen, and E. J. Kramer (VCH Weinheim, Cambridge, Chap. 6
    • H. Alexander and H. Teichler, in Materials Science and Technology, R. W. Cahn, P. Hassen, and E. J. Kramer (VCH Weinheim, Cambridge, 1992), Vol. 4, Chap. 6, p. 249.
    • (1992) Materials Science and Technology , vol.4 , pp. 249
    • Alexander, H.1    Teichler, H.2
  • 32
    • 4243449627 scopus 로고
    • (Paris), Colloq
    • P. Gadaud et al., J. Phys. (Paris), Colloq., 48, C8-101 (1987).
    • (1987) J. Phys. , vol.48
    • Gadaud, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.