Hydrogen enhanced dislocation glides in silicon

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 27-34

  Yamashita, Y ^a   Jyobe, F ^a   Kamiura, Y ^a   Maeda, K ^b  

^a OKAYAMA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISLOCATIONS (CRYSTALS); HYDROGEN; HYDROGENATION; PLASMAS; REACTION KINETICS;

PEIERLS MECHANISM;

SEMICONDUCTING SILICON;

EID: 0032755308     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<27::AID-PSSA27>3.0.CO;2-0     Document Type: Article

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