Profiling Ge islands in Si by large angle convergent beam electron diffraction

Journal of Electron Microscopy

Volumn 47, Issue 3, 1998, Pages 211-215

  Cherns, D ^a   Hovsepian, A ^a   Jager W ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

Large angle convergent beam electron diffraction; Quantum dots; Si SiGe

Indexed keywords

ELECTRON DIFFRACTION; ELECTRONS; SEMICONDUCTOR QUANTUM DOTS;

GE ISLAND; GE LAYERS; GROWTH DIRECTIONS; LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTIONS; QUANTUM DOT; ROCKING CURVES; SI/SIGE; SIMPLE++; TWO BEAMS; WETTING LAYER;

LATTICE MISMATCH;

EID: 0031751134     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023582     Document Type: Article

References (11)

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