Silicon incorporation into chemical vapor deposition diamond: A role of oxygen

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 629-631

  Sakaguchi, Isao ^a   Nishitani Gamo, Mikka ^a,c   Loh, Kian Ping ^a   Haneda, Hajime ^b   Hishita, Shunichi ^b   Ando, Toshihiro ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOPPAN PRINTING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); MICROWAVES; MULTILAYERS; OXYGEN; PLASMAS; QUARTZ; SECONDARY ION MASS SPECTROMETRY; SILICON; THIN FILMS;

HOMOEPITAXIAL FILM GROWTH; INTERFACIAL COMPOSITION;

DIAMONDS;

EID: 0031552817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119812     Document Type: Article

References (9)

1. H. Kawarada, M. Aoki, and I. Itoh, Appl. Phys. Lett. 65, 1563 (1994).
2. C. B. Dickerson and C. D. Clark, Surf. Coat. Technol. 47, 336 (1991).
3. L. Bergman, B. R. Stoner, K. F. Turner, J. T. Glass, and R. J. Nemanich. J. Appl. Phys. 73, 3951 (1993).
4. A. A. Gorokhovsky, A. V. Turukhin, R. R. Alfano, and W. Phillips, Appl. Phys. Lett. 66, 43 (1995).
5. C. D. Clark, H. Kanda, L. Kiflawi, and G, Sittas. Phys. Rev. B 51, 16 681 (1995).
6. J. Ruan, W. J. Choyke, and W. D. Partlow, Appl. Phys. Lett. 58, 295 (1991).
7. L. H. Chua, R. B. Jackman, J. S. Foord, P. R. Chalker, O. Johnston, and C. Romani, J. Vac. Sci. Technol. A 12, 1 (1994).
8. K. Sato, M. R. Fahy, M. J. Ashwin, and B. A. Joyce, J. Cryst. Growth 165, 345 (1996).
9. T. Ando, H. Haneda, M. Akaishi, Y. Sato, and M. Kamo, Diam. Relat. Mater. 5, 34 (1996).