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Volumn 38, Issue 11, 2000, Pages 1681-1690

Mechanical and electronic properties of carbon and boron-nitride nanotubes

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); BORON COMPOUNDS; CARBON; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; SPECTROSCOPIC ANALYSIS; STIFFNESS; TORSIONAL STRESS;

EID: 0033725322     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0008-6223(99)00293-6     Document Type: Article
Times cited : (192)

References (90)
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    • Nanotubes, Carbon 1996;33, special issue.
    • (1996) Nanotubes, Carbon , Issue.SPECIAL ISSUE , pp. 33
  • 9
    • 0002432515 scopus 로고    scopus 로고
    • and references therein
    • Rubio A. Cond. Matt. News. 6:1997;6. and references therein.
    • (1997) Cond. Matt. News , vol.6 , pp. 6
    • Rubio, A.1
  • 26
    • 0029518423 scopus 로고
    • and references therein
    • Tenne R. Adv. Mater. 7:1995;965. and references therein.
    • (1995) Adv. Mater. , vol.7 , pp. 965
    • Tenne, R.1
  • 81
    • 0000195762 scopus 로고    scopus 로고
    • As boron-nitride nanotubes are insulating we need a mechanism to fill the impurity levels after electron ionization. For the process to be efficient it needs to rely on a tube-doping mechanism, either structural or metal-intercalation doping
    • As boron-nitride nanotubes are insulating we need a mechanism to fill the impurity levels after electron ionization. For the process to be efficient it needs to rely on a tube-doping mechanism, either structural or metal-intercalation doping (Rubio A, Miyamoto Y, Blase X, Cohen ML, Louie SG. Phys Rev B 1996;53:4023-4026). The doping will benefit from the near-free electron-like states at the bottom of the conduction band in boron nitride (Rubio A, Corkill JL, Cohen ML. Phys Rev B 1994;49:5081; Blase X, Rubio A, Louie SG, Cohen ML. Europhys Lett 1994;28:335) in order to fill up the defect levels.
    • (1996) Phys Rev B , vol.53 , pp. 4023-4026
    • Rubio, A.1    Miyamoto, Y.2    Blase, X.3    Cohen, M.L.4    Louie, S.G.5
  • 82
    • 33144483993 scopus 로고
    • The doping will benefit from the near-free electron-like states at the bottom of the conduction band in boron nitride
    • As boron-nitride nanotubes are insulating we need a mechanism to fill the impurity levels after electron ionization. For the process to be efficient it needs to rely on a tube-doping mechanism, either structural or metal-intercalation doping (Rubio A, Miyamoto Y, Blase X, Cohen ML, Louie SG. Phys Rev B 1996;53:4023-4026). The doping will benefit from the near-free electron-like states at the bottom of the conduction band in boron nitride (Rubio A, Corkill JL, Cohen ML. Phys Rev B 1994;49:5081; Blase X, Rubio A, Louie SG, Cohen ML. Europhys Lett 1994;28:335) in order to fill up the defect levels.
    • (1994) Phys Rev B , vol.49 , pp. 5081
    • Rubio, A.1    Corkill, J.L.2    Cohen, M.L.3
  • 83
    • 84952649701 scopus 로고
    • in order to fill up the defect levels
    • As boron-nitride nanotubes are insulating we need a mechanism to fill the impurity levels after electron ionization. For the process to be efficient it needs to rely on a tube-doping mechanism, either structural or metal-intercalation doping (Rubio A, Miyamoto Y, Blase X, Cohen ML, Louie SG. Phys Rev B 1996;53:4023-4026). The doping will benefit from the near-free electron-like states at the bottom of the conduction band in boron nitride (Rubio A, Corkill JL, Cohen ML. Phys Rev B 1994;49:5081; Blase X, Rubio A, Louie SG, Cohen ML. Europhys Lett 1994;28:335) in order to fill up the defect levels.
    • (1994) Europhys Lett , vol.28 , pp. 335
    • Blase, X.1    Rubio, A.2    Louie, S.G.3    Cohen, M.L.4
  • 85
  • 87


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.