Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 57-61

  Zhuang, Q D ^a   Yoon, S F ^a   Zheng, H Q ^a   Yuan, K H ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DEPOSITION; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; WETTING;

INDIUM ARSENIDE; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033715123     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00375-4     Document Type: Article

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