Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 10, 1999, Pages 1388-1390

  Li, Hanxuan ^a   Daniels Race, Theda ^a   Wang, Zhanguo ^b  

^a Duke University   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000575097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123559     Document Type: Article

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