A nondiamond phase at the interface between oriented diamond and Si(100) observed by confocal Raman spectroscopy

Applied Physics Letters

Volumn 70, Issue 12, 1997, Pages 1530-1532

  Nishitani Gamo, Mikka ^a,c   Ando, Toshihiro ^a   Yamamoto, Kazuo ^b   Watanabe, Kenji ^b   Dennig, Paul A ^b   Sato, Yoichiro ^b   Sekita, Masami ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOPPAN PRINTING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; DIAMONDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LASER BEAMS; MORPHOLOGY; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; SURFACES;

BIAS ASSISTED CHEMICAL VAPOR DEPOSITION DIAMOND; DIAMOND GROWTH; INTERFACIAL STRUCTURES; NONDIAMOND PHASE; SILICON SUBSTRATE;

PHASE INTERFACES;

EID: 0031100734     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118608     Document Type: Article

References (18)

1. S. D. Walter, B. R. Stoner, J. T. Glass, P. J. Ellis, D. S. Buhaenko, C. E. Jenkins, and P. Southworth, Appl. Phys. Lett. 62, 1215 (1993).
2. H. Maeda, M. Irie, T. Hino, K. Kusakabe, and S. Morooka, J. Mater. Res. 10, 158 (1995).
3. X. Jiang and C.-P. Klages, Diam. Relat. Mater. 2, 1112 (1993).
4. X. Jiang, C.-P. Klages, R. Zachai, M. Hartweg, and H.-J. Füsser, Appl. Phys. Lett. 62, 3438 (1993).
5. M. Schreck, R. Hessmer, S. Geiger, B. Rauschenbach, and B. Stritzker, Diam. Relat. Mater. 3, 510 (1994).
6. R. Stöckel, K. Janischowsky, S. Rohmfeld, J. Ristein, M. Hundhausen, and L. Ley, Diam. Relat. Mater. 5, 321 (1996).
7. C. J. Chen, L. Chang, T. S. Lin, and F. R. Chen, J. Mater. Res. 10, 3041 (1995).
8. T. Suzuki, M. Yagi, and K. Shibuki, Appl. Phys. Lett. 64, 557 (1994).
9. B. R. Stoner and J. T. Glass, Appl. Phys. Lett. 60, 698 (1992).
10. H. Kawarada, T. Suesada, and H. Nagasawa, Appl. Phys. Lett. 66, 583 (1995).
11. B. R. Stoner, S. R. Sahaida, J. P. Bade, P. Southworth, and P. J. Ellis, J. Mater. Res. 8, 1334 (1993).
12. P. John, C. Graham, D. K. Milne, M. G. Jubber, and J. I. B. Wilson, Diam. Relat. Mater. 5, 256 (1996).
13. X. Jiang and C. L. Jia, Appl. Phys. Lett. 67, 1197 (1995).
14. M. N.-Gamo, T. Ando, K. Yamamoto, P. A. Dennig, and Y. Sato, J. Mater. Res. (in press).
15. J. Kasai and Y. Katayama, Rev. Sci. Instrum. 66, 3738 (1995).
16. P. Gonon, E. Gheeraert, A. Deneuville, F. Fontaine, L. Abello, and G. Lucazeau, J. Appl. Phys. 78, 7059 (1995).
17. R. G. Buckley, T. D. Moustakas, Ling Ye, and J. Varon, J. Appl. Phys. 66, 3595 (1989).
18. H. Maeda, T. Saito, K. Kusakabe, and S. Morooka, in Proceedings of the 2nd Korea-Japan Symposium on Advanced Materials, p. 136.