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Volumn 7, Issue 7, 1998, Pages 1017-1020

Analysis of heteroepitaxial mechanism of diamond grown by chemical vapor deposition

Author keywords

Bias treatment; Heteroepitaxial mechanism

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; SILICON WAFERS;

HETEROEPITAXIAL GROWTH;

DIAMOND FILMS;

EID: 0032116510 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(98)00154-X Document Type: Article

Times cited : (20)

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