Radio frequency plasma nitridation of c-plane sapphire; influence on properties of GaN grown by molecular beam epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 3, 1999, Pages 270-273

  Heinlein, Christian ^a   Grepstad, Jostein K ^a   Riechert, Henning ^b   Averbeck, Robert ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDING; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE TREATMENT; TEMPERATURE;

GALLIUM NITRIDATION; RADIO FREQUENCY PLASMA NITRIDATION; TEMPERATURE HALL MOBILITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033614225     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00003-3     Document Type: Letter

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