GaN based LEDs grown by molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3279, Issue , 1998, Pages 28-35

  Averbeck, R ^a   Graber, A ^a   Tews, H ^a   Bernklau, D ^a   Barnhofer U ^a   Riechert, H ^a  

^a SIEMENS AG   (Germany)

Author keywords

GaN; Heterostructure; InGaN; Light emitting diode; Molecular beam epitaxy

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

VALENCE BANDS;

LIGHT EMITTING DIODES;

EID: 0032225651     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304427     Document Type: Conference Paper

References (13)