Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 12-15

  Lee, Jeong wook ^a   Paek, Ho sun ^a   Yoo, Ji Beom ^a   Kim, Gyeung ho ^b   Kum, Dong Wha ^b  

^a Sungkyunkwan University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); LOW TEMPERATURE EFFECTS; ROUGHNESS MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

CRYSTALLINE QUALITY; DOUBLE CRYSTAL X RAY DIFFRACTOMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528953     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00404-8     Document Type: Article

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