Growth and characterization of thick GaN by sublimation method and homoepitaxial growth by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1637-1640

  Kurai, Satoshi ^a   Abe, Toshimitsu ^a   Naoi, Yoshiki ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Bulk GaN; GaN; Homoepitaxy; Laser; MOCVD; Photopumping; Stimulated emission; Sublimation

Indexed keywords

CHARACTERIZATION; ELECTRON EMISSION; EPITAXIAL GROWTH; LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBLIMATION; SUBSTRATES;

GALLIUM NITRIDE; HOMOEPITAXIAL GROWTH; PHOTOPUMPING; ROOM TEMPERATURE; STIMULATED EMISSION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030100471     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1637     Document Type: Article

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