Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 117-121

  Bertram, F ^a   Riemann, T ^a   Christen, J ^a   Kaschner, A ^b   Hoffmann, A ^b   Hiramatsu, K ^c   Shibata, T ^d   Sawaki, N ^d  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c MIE UNIVERSITY   (Japan)

^d NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; EPITAXIAL GROWTH; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; STRAIN;

BLUE SHIFT; EPITAXIAL LATERAL OVERGROWTH; MICRO RAMAN SPECTROSCOPY; NARROW EXCITONIC EMISSION; SCANNING CATHODOLUMINESCENCE MICROSCOPY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033528932     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00329-8     Document Type: Article

References (18)

1. Nakamura S., Senoh M., Nagahama S. et al. Jpn. Appl. Phys. 35:1996;74.
2. Akasaki I., Sota S., Sakai H., Tanaka T., Koike M., Amano H. Electron Lett. 32:1996;1105.
3. Pribat D., Gerad B., Dupuy M., Legagneux P. Appl. Phys. Lett. 60:1992;2144.
4. S.F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, N. Otsuka, Appl. Phys. Lett. 68 (1992).
5. Lester S.D., Ponce F.A., Craford M.G., Steigerwald D.A. Appl. Phys. Lett. 66:1996;1249.
6. Sakai A. Appl. Phys. Lett. 71:1997;2259.
7. Kapolnek D., Keller S., Ventury R., Underwood R.D., Kozodoy P., Den Baars S.P., Mishra U.K. Appl. Phys. Lett. 71:1997;1204.
8. Usui A., Sunakawa H., Sakai A., Yamaguchi A.A. Jpn. J. Appl. Phys. 36:1997;899.
9. Zheleva T.S., Nam O.H., Bremser M.D., Davis R.F. Appl. Phys. Lett. 71:1997;2472.
10. Kapolnek D., Wu X.H., Heying B., Keller S., Keller B.P., Mishra U.K., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 67:1995;1541.
11. Nakamura S., Senoh M., Nagahama S. et al. Appl. Phys. Lett. 72:1998;211.
12. Nam O.-H., Bremser M.D., Zheleva T. S., Davis R.F. Appl. Phys. Lett. 71:1997;2638.
13. Christen J., Grundmann M., Bimberg D. J. Vac. Sci. Technol. B9:1991;2358.
14. Kisielowski C., Krüger J., Ruvimov S. et al. Phys. Rev. 54:1996;17745.
15. Siegle H., Hoffmann A., Eckey L. et al. Appl. Phys. Lett. 71:1997;2490.
16. Kisielowski C., Krüger J., Ruvimov S. et al. Phys. Rev. 55:1997;4907.
17. Perlin P., Camassel J., Knap W. et al. Appl. Phys. Lett. 67:1995;2524.
18. F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, K. Hiramatsu, Appl. Phys. Lett. submitted.