Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

Applied Physics Letters

Volumn , Issue , 1995, Pages 1252-

  Qian, W ^a   Skowronski, M ^a   De Graef, M ^a   Doverspike, K ^b   Rowland, L B ^b   Gaskill, D K ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH DIRECTIONS; LOW ANGLE GRAIN BOUNDARIES; LOW TEMPERATURES; MICRO-STRUCTURAL CHARACTERIZATION; MISORIENTATIONS; ORGANOMETALLIC VAPOR PHASE EPITAXY; SAPPHIRE SUBSTRATES; THREADING DISLOCATION;

EDGE DISLOCATIONS; GRAIN BOUNDARIES; ORGANOMETALLICS; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM NITRIDE;

EID: 36448998638     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.113253     Document Type: Article

References (18)