Nitial stages of growth of GaN over (0001) Al2O3 substrate using MBE: A crystallographic analysis of the defects

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 29-31

  Potin, V ^a   Ruterana, P ^a   Nouet, G ^a  

^a CNRS   (France)

Author keywords

AlN; Grain boundary; High resolution electron microscopy; Molecular beam epitaxy; Sapphire

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

IMAGE SIMULATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0344545088     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00178-5     Document Type: Article

References (11)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Jpn. J. Appl. Phys. 34 (1995) L797.
2. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76 (1994) 1363.
3. P. Vermaut, P. Ruterana, G. Nouet, H. Morkoç, Phil. Mag A. 75 (1997) 239.
4. V. Potin, P. Ruterana, G. Nouet, J. Appl. Phys. 82 (1997) 1276.
5. X.J. Ning, F.R. Chien, P. Pirouz, J.W. Yang, M. Asif Khan, J. Mater. Res. 11 (1996) 580.
6. F.A. Ponce, D.P. Bour, W. Götz, P.J. Wright, Appl. Phys. Lett. 68 (1996) 57.
7. W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L.B. Rowland, D.K. Gaskill, Appl. Phys. Lett. 66 (1995) 1252.
8. P. Vennegues, B. Beaumont, P. Gibart, J. Mater. Sci. Eng. B43 (1997) 274.
9. H. Selke, S. Einfeldt, U. Birkle, D. Hommel, P.L. Ryder, Proceeding at the Xth Microscopy of Semiconducting Materials, Oxford 1997.
10. P. Stadelmann, Ultramicroscopy 21 (1987) 131.
11. A.N. Kiselev, F. Sarrazit, E.A. Stepanstov, E. Olsson, T. Claeson, V.I. Bondarenko, R.C. Pond, N.A. Kiselev, Phil. Mag. A, 76 (1997) 633.