Investigation into the re-use of PMOS Dosimeters1

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 445-451

  Kelleher, A ^a   McDonnell, N ^a   O'Neill, B ^a   Lane, W ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGED PARTICLES; ESTIMATION; INTERFACES (MATERIALS); MOS DEVICES; RADIATION DAMAGE; RELAXATION PROCESSES; SENSITIVITY ANALYSIS;

IRRADIATION; OXIDE CHARGE; P TYPE METAL OXIDE SEMICONDUCTOR DOSIMETER; RADIATION SENSITIVE FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

DOSIMETERS;

EID: 0028446859     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299782     Document Type: Article

References (21)

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