Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7×1015 n/cm2

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1590-1598

  Li, Z ^a   Ghislotti, G ^a   Kraner, H W ^a   Li, C J ^a,c   Nelsen, B ^a   Feick, H ^b   Lindstroem, G ^b  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF HAMBURG   (Germany)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; IRRADIATION; NEUTRONS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DIODES; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS; ELEVATED TEMPERATURE ANNEALING; HIGH RESISTIVITY SILICON DETECTORS; MICROSCOPIC DEFECT ANALYSIS; THERMALLY STIMULATED CURRENT SPECTROSCOPY; VACANCY CLUSTERS; VERY HIGH FLUENCE NEUTRON IRRADIATION;

SILICON SENSORS;

EID: 0030168853     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507153     Document Type: Article

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