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Physical Review B

Volumn 15, Issue 8, 1977, Pages 3836-3843

Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

(5) Mooney, P M a,b Cheng, L J a Suli M a,c Gerson, J D a Corbett, J W a

a STATE UNIVERSITY OF NEW YORK (United States)

b VASSAR COLLEGE (United States)

c Hiradástechnikai Ipari Kutató Intézet Félvezetö Föosztály ^* (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001214514 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.15.3836 Document Type: Article

Times cited : (265)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.