Two-level model for heavily irradiated silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 425, Issue 1, 1999, Pages 343-346

  Borchi, E ^a   Brozzi, M ^a   Li, Z ^b   Pirollo, S ^a  

^a INFM   (Italy)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

SEMICONDUCTOR DETECTORS;

RADIATION DETECTORS;

EID: 0033114950     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01378-3     Document Type: Article

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