Modeling of channel boron distribution in Deep Sub-0.1μm n-Mosfets

IEICE Transactions on Electronics

Volumn E82-C, Issue 6, 1999, Pages 813-818

  Kumashiro, Shigetaka ^a   Sakamoto, Hironori ^a   Takeuchi, Kiyoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Deep sub 0.1 fim n mOSFET; Inverse modeling; Point defect pair diffusion model; Reverse short channel effect

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; MICROSTRUCTURE; POINT DEFECTS; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE;

BORON DEPLETION EFFECT; CHANNEL BORON DISTRIBUTION; REVERSE SHORT CHANNEL EFFECT; SHEET CHARGE DISTRIBUTION; SOURCE DRAIN EXTENSION JUNCTION;

MOSFET DEVICES;

EID: 0033329073     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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