Evidence of channel profile modification due to implantation damage studied by a new method, and its implication to reverse short channel effects of nMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 993-995

  Nishi, K ^a   Matsuhashi, H ^a   Ochiai, T ^a   Kasai, M ^a   Nishikawa, T ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRON BEAM LITHOGRAPHY; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CHANNEL PROFILE MODIFICATION; DRAIN IMPLANTATION; IMPLANTATION VOLTAGE; REVERSE CHANNEL EFFECTS; SILICON IMPLANTATION; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029543663     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)