Role of boron segregation and transient enhanced diffusion on reverse short channel effect

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 141-143

  Machala, C ^a   Wise, R ^a   Mercer, D ^a   Chatterjee, A ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; EPITAXIAL GROWTH; ION IMPLANTATION; OXIDATION; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SILICON WAFERS;

BORON SEGREGATION; REVERSE SHORT CHANNEL EFFECT; SILICON OXIDE INTERFACE; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING FILMS;

EID: 0030678755     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)