Reverse Short-Channel Effect Due to Lateral Diffusion of Point-Defect Induced by Source/Drain Ion Implantation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 13, Issue 4, 1994, Pages 507-514

  Kunikiyo, Tatsuya ^a   Mitsui, Katsuyoshi ^a   Fujinaga, Masato ^a   Uchida, Tetsuya ^a   Kotani, Norihiko ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIFFUSION; DOPING (ADDITIVES); ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); ION IMPLANTATION; MODELS; SEMICONDUCTOR DEVICE MODELS; VOLTAGE MEASUREMENT;

FRENKEL PAIRS; LATERAL DIFFUSION; POINT DEFECTS; SHORT CHANNEL EFFECTS; SOURCE/DRAIN ION IMPLANTATION;

MOS DEVICES;

EID: 0028419768     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.275360     Document Type: Article

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