Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 849-852

  Sadana, D K ^a   Acovic, A ^a   Shahidi, G ^a   Hanafi, H ^a   Warren, A C ^a   Grutzmacher, D ^a   Cardone, F ^a   Sun, J ^a   Davari, B ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; ELECTRIC BREAKDOWN;

2-D NUMERICAL SIMULATION; CHANNEL LENGTH; CHANNEL REGION; DRAIN-INDUCED BARRIER LOWERING; IMPLANTATION DAMAGE; SHORT-CHANNEL EFFECT; SOURCE AND DRAINS; SOURCE/DRAIN REGIONS;

MOSFET DEVICES;

EID: 85027195407     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307490     Document Type: Conference Paper

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