Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten mask

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Kawaguchi, Yasutoshi ^a   Nambu, Shingo ^a   Sone, Hiroki ^a   Yamaguchi, Masahito ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Sawaki, Nobuhiko ^a   Lyechika, Yasushi ^a   Maeda, Takayoshi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GROWTH (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SILICA; SURFACE STRUCTURE; TUNGSTEN;

EPITAXIAL LATERAL OVER GROWTH; GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; SELECTIVE AREA GROWTH; SILICON DIOXIDE MASK; TUNGSTEN MASK;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033322139     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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