Characterization of Be-implanted GaN annealed at high temperatures

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Running, C ^a   Linthicum, K J ^a   Carlson, E P ^a   Hartlieb, P J ^a   Thomson, D B ^a   Gehrke, T ^a   Davis, R F ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; BERYLLIUM; DIFFUSION IN SOLIDS; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; NITROGEN; PHOTOLUMINESCENCE; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SURFACES;

NITROGEN FLUX; PHOTOLUMINESCENCE MEASUREMENT; RADIO FREQUENCY PLASMA SOURCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033320412     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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