A physics-based dynamic thermal impedance model for vertical bipolar transistors on soi substrates

IEEE Transactions on Electron Devices

Volumn 46, Issue 12, 1999, Pages 2333-2339

  Brodsky, Jonathan S ^a,b   Fox, Robert M ^a   Zweidinger, David T ^b  

^a TEXAS INSTRUMENTS   (United States)

^b University of Florida   (United States)

Author keywords

BJT; Dielectric isolation; Self heating; Thermal resistance

Indexed keywords

COMPUTER SIMULATION; EQUIVALENT CIRCUITS; HEAT RESISTANCE; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

BIPOLAR JUNCTION TRANSISTORS (BJT); MULTIPLE-POLE CIRCUITS; SOFTWARE PACKAGE SPICE; SOFTWARE PACKAGE THERMAL IMPEDANCE PRE-PROCESSOR (TIPP);

BIPOLAR TRANSISTORS;

EID: 0033317033     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.808075     Document Type: Article

References (17)

1. C. Davis et al., "UHF-1: A high-speed complementary bipolar analog process on SOI," in Proc. IEEE BCTM, 1992, pp. 260-263.
2. R. C. Jerome et al, "ACUTE: A high-performance analog complementary polysilicon emitter bipolar technology utilizing SOI/trench full dielectric isolation," in Proc. IEEE Int. SOI Conf., 1993, pp. 100-101.
3. P. R. Ganci et al., "Self-heating in high-performance bipolar transistors fabricated on SOI substrates," in 1EDM Tech. Dig., 1992, pp. 417-420.
4. R. M. Fox, S.-G. Lee, and D. T. Zweidinger, "The effects of BJT selfheating on circuit behavior," IEEE J. Solid-State Circuits, vol. 28, pp. 678-685, June 1993.
5. H. Nishizawa et al., "A fully SiO2-isolated self-aligned SOI-bipolar transistor for VLSI's," in Proc. IEEE BCTM, 1991, pp. 53-58.
6. D. T. Zweidinger, J. S. Brodsky, and R. M. Fox, "A physical thermal resistance model for vertical BJT's on SOI," in Proc. IEEE Int. SOI Conf., Oct. 1995, pp. 84-85.
7. C. C. McAndrew et al., "VBIC95, the vertical bipolar inter-company model," IEEEJ. Solid-State Circuits, vol. 31, pp. 1476-1483, Oct. 1996.
8. J. S. Brodsky, "TIPP: Thermal impedance pre-processor version 0.5," User's Reference, Dept. ECE, Univ. Florida, Gainesville, Tech. Rep., 1995.
9. D. T. Zweidinger, "Modeling of transistor self-heating for circuit simulation," Ph.D. dissertation, Univ. Florida, Gainesville, Aug. 1997.
10. S. Feindt et al., "XFCB: A high-speed complementary bipolar process on bonded SOI," in Proc. IEEEBCTM, 1992, pp. 264-267.
11. T. Nakamura and H. Nishizawa, "Recent progress in bipolar transistor technology," IEEE Trans. Electron Devices, vol. 42, pp. 390-398, Mar. 1995.
12. M.-Y. Chuang, "Three-dimensional distributed effects on the DC and AC performance of high-speed semiconductor devices," Ph.D. dissertation, Univ. Florida, Gainesville, Aug. 1997.
13. J. S. Brodsky, "Physics-based thermal impedance models for the simulation of self-heating in semiconductor devices and circuits," Ph.D. dissertation, Univ. Florida, Gainesville, Aug. 1997.
14. M. N. Ozisik, Heat Conduction, 2nd ed. New York: Wiley, 1993.
15. ANSYS User's Manual, Rev. 5.2, Swanson Analysis Systems, Houston, PA, 1995.
16. R. C. Joy and E. S. Schiig, "Thermal properties of very fast transistors," IEEE Trans. Electron Devices, vol. ED-17, pp. 586-594, Aug. 1970.
17. D. T. Zweidinger et al., "Thermal impedance extraction for bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 342-346, Feb.