Opportunities for materials modeling in microelectronics: Programmed rate chemical vapor deposition

Journal of Computer-Aided Materials Design

Volumn 6, Issue 2, 1999, Pages 283-309

  Cale, Timothy S ^a   Richards, David F ^a   Yang, Daewon ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CONTINUUM MECHANICS; CRYSTAL MICROSTRUCTURE; FILM GROWTH; MICROELECTRONICS; NUCLEATION; PROCESS ENGINEERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS; TRANSPORT PROPERTIES;

PREDICTIVE PROCESS ENGINEERING; PROGRAMMED RATE CHEMICAL VAPOR DEPOSITION (PRCVD);

SEMICONDUCTING FILMS;

EID: 0033316542     PISSN: 09281045     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008762530690     Document Type: Article

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