Effects of temperature ramping on MOCVD Al film properties

Materials Research Society Symposium - Proceedings

Volumn 472, Issue , 1997, Pages 337-342

  Yang, D ^a   Jonnalagadda, R ^a   Mahadev, V ^a   Cale, T S ^a   Hillman, J T ^a   Foster, R F ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SILICON WAFERS; SURFACE ROUGHNESS; THERMAL EFFECTS; TITANIUM NITRIDE;

TEMPERATURE RAMPING;

METALLIC FILMS;

EID: 0031355228     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-472-337     Document Type: Conference Paper

References (9)