Deposition and simulation of refractory barriers into high aspect ratio re-entrant features using directional sputtering

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 311-314

  Smy, T ^a   Joshi, R V ^a   Tait, N ^a   Dew, S K ^a   Brett, M J ^a  

^a CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; ION BOMBARDMENT; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; TITANIUM; TITANIUM NITRIDE; TUNGSTEN;

DIRECTIONAL SPUTTERING; REFRACTORY BARRIERS;

VLSI CIRCUITS;

EID: 0032256247     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)